合成电子学实验室

以化成器 | Towards electronics, in a chemistry way

合成电子学(Synthetic Electronics, SynE)旨在设计合成纳米乃至量子尺度半导体的杂化及异质结构,探索晶体管的尺寸极限,为后摩尔时代的微纳器件构筑提供一种可能的化学思路。由此践行系统材料学理念,追求材料器件化目标。

纪清清
纪清清
助理教授 / 研究员 / 博导

研究方向 更多 >

设计制备纳米乃至原子尺度的半导体杂化/异质结构,探索电子器件的微缩极限,以化学和材料工程途径实现下一代低维电子学。

课题组新闻 更多 >

论文列表 更多 >

*通讯作者;#共同一作;加粗姓名:SynE组员

  • 41
    Bias-Dependent Noise Spectroscopy Reveals Contact-Noise Suppression and Hot-Carrier Dynamics in Conductive MOF Single Crystals Longhao Zhu#, Yuanyuan Qiu#, Haoyang Zhang, Yunlong Fan, Xinyan Wu, Jinkun Guo, Qingshen Zeng, Qiyang Zhang, Jiamin Xue, Jin-Hu Dou*, Qingqing Ji*
    Submitted
  • 40
    An Encoded Asymmetric Ligand for Metal-Selective Topological Assembly of Two-Dimensional Metal–Organic Frameworks — Huimin Qi#, Jinkun Guo#, Xinyan Wu#, Weishan Li, Tongyang Zhao, Ze-Fan Yao, Hao Chen, Ling Zhang, Bin Jiang, Yi Liu, Haoyang Zhang, Yunlong Fan, Tianyang Chen, Qingqing Ji*, Jin-Hu Dou*
    Submitted
  • 39
    Sub-Attojoule Switching at Ultralow Voltage in Two-Dimensional Bismuth Oxyiodide Memristor with Reconfigurable Volatility and Non-Volatility — Chuxuan Xiao#, Xinyan Wu#, Luying Song#, Shuo Chen, Xiaohui Li, Ruihan Xu, Zhu Du, Jialiang Wu, Hang Sun, Yuhang Li, Wenbo Zhao, Kaichen Zhu, Wenwu Li, Qingqing Ji*, Jianping Shi*, Jun He*
    Submitted
  • 38
    Revealing the Boltzmann Sigmoidal Activation by Iodide for Tunable Vanadium Doping in Monolayer MoS2 Yuanyuan Qiu#, Bin Hua#, Zhenping Wang#, Fei Hu, Yang Lu, Marvin L. Cohen, Alex Zettl, Cong Su*, Young Woo Choi*, Qingqing Ji*
    In revision
  • 37
    Chirality-dependent Electrical Characteristics of MoS2 Nanoscroll Transistors Yuanyuan Qiu#, Fei Hu#, Jialong Wang, Min Chen, Xiushuo Ma, Qingsheng Zeng, Chenyazhi Hu, Jun Li, Kecheng Cao, Yanfeng Zhang, Qingqing Ji*
    In revision