Congrats to Mingxuan for his accepted paper entitled “In-Plane Ferroelectrics Enabling Reduced Hysteresis in Monolayer MoS2 Transistors” in Carbon Neutralization.
We show in this paper that in-plane ferroelectric NbOCl2 could be stacked with monolayer MoS2 to suppress the hysteresis in both the output and transfer curves.
